Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
نویسندگان
چکیده
منابع مشابه
Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays
One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; t...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2011
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.08.023